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BCD
1.0 µm BCD Processes
This BCD process is used to
design high voltage ICs with low power. The typical breakdown voltage is
650 volts. This 1.0 µm BCD process combines DMOS, Bipolar and CMOS
technologies to integrate a wide variety of MOS and bipolar components
on the same die. In addition to the aforementioned CMOS caracteristics
the BCD process also provides the following features: - 650 volts und 350 volts n-channel DMOS - 350 volts PMOS
- 20 volts CMOS / 80 volts Bipolar transistors, 650
volts capacitors and diodes
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