CMOS   0.18 - 1.0 µm CMOS Processes
for analog and mixed-signal applications up to 100 volts (EEPROM optional)


The basic version of these CMOS processes provide an economic solution with single poly and single metal. There are several options available for the different processes.


      -   Supply voltage < 1 volt up to 5 volts

        -   n-channel and p-channel high voltage transistors up to 100 volts  

        -   Bipolar transistors, diodes including Schottky and Zener

        -   Up to 5 metal layers
        -   Double poly for linear capacitors
        -   HiRes and/or low TC poly resistors
        -   RAM, ROM, EEPROM, MEMS 

 


Typical electrical parameters of the 1.0 µm CMOS processes:

 

 

Device

Vt

[V]

Ids

[mA/µm]

BVDSS

[V]     

I

[µm]

RDSON

[kΩµm]

 

M O S    T R A N S I S T O R S

 

N-channel

0,80

0,18

13      

1,2

 

 

P-channel

-0,90

0,07

-13      

1,3

 

 

N-channel zero

-0,10

0,10

14      

6,0

 

 

N-channel high voltage

0,80

 

95      

 

40

 

P-channel high voltage

-0,90

 

-45      

 

110

 

S P E C I A L   D I O D E S

 

Schottky

 

 

10      

 

 

 

Zener

 

 

5      

 

 

 

 

 

 

 

 

 

 

 



 

 

 

 

 

 

 

 

 

 

 

 

Capacitors and Resistors:

Device

C

[fF/µm2]

TC

[10-3/K]

RS

[kΩµm]

Poly to poly capacitor

0,43

0,07 

 

High ohmic resistor

 

- 5 

20

Low TC resisitor

 

- 0,2 

350

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